Package cooling by coil cavity

ABSTRACT

A semiconductor device assembly can include a first die package comprising a bottom side; a top side; and lateral sides extending between the top and bottom sides. The assembly can include an encapsulant material encapsulating the first die package. In some embodiments, the assembly includes a cooling cavity in the encapsulant material. The cooling cavity can have a first opening; a second opening; and an elongate channel extending from the first opening to the second opening. In some embodiments, the elongate channel surrounds at least two of the lateral sides of the first die package. In some embodiments, the elongate channel is configured to accommodate a cooling fluid.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.16/237,111, filed Dec. 31, 2018; which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present technology generally relates to semiconductor deviceassemblies, and in some embodiments more particularly to semiconductordevice assemblies having cooling channels.

BACKGROUND

Packaged semiconductor dies, including memory chips, microprocessorchips, imager chips, and central processing units, typically include asemiconductor die mounted on a substrate and encased in a plasticprotective covering. The die includes functional features, such asmemory cells, processor circuits, and imager devices, as well as bondpads electrically connected to the functional features. The bond padscan be electrically connected to terminals outside the protectivecovering to allow the die to be connected to higher level circuitry.

Semiconductor manufacturers continually reduce the size of die packagesand other semiconductor components to fit within the space constraintsof electronic devices, while also increasing the functional capacity ofeach package to meet operating parameters. One approach for increasingthe processing power of a semiconductor package without substantiallyincreasing the surface area covered by the package (i.e., the package's“footprint”) is to vertically stack multiple semiconductor dies on topof one another in a single package. The dies in such vertically-stackedpackages can be interconnected by electrically coupling the bond pads ofthe individual dies with the bond pads of adjacent dies usingthrough-silicon vias (TSVs). In vertically stacked packages, the heatgenerated is difficult to dissipate, which increases the operatingtemperatures of the individual dies, the junctions therebetween, and thepackage as a whole. Another approach for increasing processor powerwhile decreasing overall assembly size is to move die packages and othersemiconductor devices closer to each other. In such applications, heatfrom adjacent packages can increase the overall operating temperature ofeach die package. These size-reduction efforts can cause the diepackages to reach temperatures above their maximum operatingtemperatures in many types of device.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present technology can be better understood withreference to the following drawings. The components in the drawings arenot necessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIG. 1 is a perspective view of an embodiment of a die package assembly.

FIG. 2 is a front view of the die package assembly of FIG. 1.

FIG. 3 is a top view of the die package assembly of FIG. 1.

FIG. 4 is a front view of a die package system incorporating the diepackage assembly of FIG. 1.

FIG. 5 is a front view of the die package system of FIG. 4, including anencapsulant and illustrating a cavity formed by removal of a sacrificialmember.

FIG. 6 is a front view of the die package system of FIG. 5, with a fluidmanagement system illustrated schematically.

FIG. 7 is a flowchart illustrating an embodiment of a method ofmanufacturing a semiconductor device.

FIG. 8 is a perspective view of an embodiment of a die package assembly.

FIG. 9 is a front view of the die package assembly of FIG. 8.

FIG. 10 is a top view of the die package assembly of FIG. 8.

FIG. 11 is a perspective view of an embodiment of a die packageassembly.

FIG. 12 is a front view of the die package assembly of FIG. 11.

FIG. 13 is a top view of the die package assembly of FIG. 11.

FIG. 14 is a perspective view of die package system incorporating thedie package assemblies of FIGS. 1, 8, and 11.

FIG. 15 is a perspective view of the die package system of FIG. 15,including an encapsulant and illustrating a cavity formed by removal ofa sacrificial member.

FIG. 16 is a schematic view showing a system that includes asemiconductor device in accordance with embodiments of the presenttechnology.

DETAILED DESCRIPTION

Specific details of several embodiments of semiconductor deviceassemblies having a cooling channel formed in an encapsulant (e.g.,overmold) of a package casing are described below. The term“semiconductor device” generally refers to a solid-state device thatincludes one or more semiconductor materials. Examples of semiconductordevices include logic devices, memory devices, microprocessors, anddiodes among others. Furthermore, the term “semiconductor device” canrefer to a finished device or to an assembly or other structure atvarious stages of processing before becoming a finished device.Depending upon the context in which it is used, the term “substrate” canrefer to a wafer-level substrate or to a singulated, die-levelsubstrate. A person having ordinary skill in the relevant art willrecognize that suitable steps of the methods described herein can beperformed at the wafer level or at the die level. Furthermore, unlessthe context indicates otherwise, structures disclosed herein can beformed using conventional semiconductor-manufacturing techniques.Materials can be deposited, for example, using chemical vapordeposition, physical vapor deposition, atomic layer deposition, spincoating, and/or other suitable techniques. Similarly, materials can beremoved, for example, using plasma etching, wet etching,chemical-mechanical planarization, or other suitable techniques.

The term “semiconductor device package” can refer to an arrangement withone or more semiconductor devices incorporated into a common package. Asemiconductor package can include a housing or casing that partially orcompletely encapsulates at least one semiconductor device. Asemiconductor device package can also include an interposer substratethat carries one or more semiconductor devices and is attached to orotherwise incorporated into the casing. The term “semiconductor deviceassembly” can refer to an assembly of one or more semiconductor devices,semiconductor device packages, and/or substrates (e.g., interposer,support, or other suitable substrates). The semiconductor deviceassembly can be manufactured, for example, in discrete package form,strip or matrix form, and/or wafer panel form. As used herein, the terms“vertical,” “lateral,” “upper,” and “lower” can refer to relativedirections or positions of features in the semiconductor device in viewof the orientation shown in the Figures. For example, “upper” or“uppermost” can refer to a feature positioned closer to the top of apage than another feature. These terms, however, should be construedbroadly to include semiconductor devices having other orientations, suchas inverted or inclined orientations where top/bottom, over/under,above/below, up/down, and left/right can be interchanged depending onthe orientation.

Many embodiments of the present technology are described below in thecontext of formation of cooling cavities within a semiconductor device.A person having ordinary skill in the relevant art will also understandthat the present technology may have embodiments for forming more thanone cooling passage in a single semiconductor assembly. The presenttechnology may accordingly be practiced without several of the detailsof the embodiments described herein with reference to FIGS. 1-16. Forease of reference, identical reference numbers are used to identifysimilar or analogous components or features throughout this disclosure,but the use of the same reference number does not imply that thefeatures should be construed to be identical. Indeed, in many examplesdescribed herein, identically numbered features have a plurality ofembodiments that are distinct in structure and/or function from eachother. Furthermore, the same shading may be used to indicate materialsin cross section that can be compositionally similar, but the use of thesame shading does not imply that the materials should be construed to beidentical unless specifically noted herein.

Several embodiments of the present technology have at least one diepackage having a bottom side, a top side, and lateral sides extendingbetween the top and bottom sides. An encapsulant material mayencapsulate the first die package. A cooling cavity may be formed in theencapsulant material, the cooling cavity having a first opening, asecond opening, and an elongate channel extending from the first openingto the second opening. The cooling cavity can be formed by removing asacrificial member from the encapsulant. The sacrificial member, andresulting cooling cavity, can be sized, shaped, and otherwise designedto facilitate efficient fluid flow through the encapsulant and near thedie package(s) to efficiently cool the die package system.

FIGS. 1-3 illustrate an example of a die package assembly 100. Theassembly 100 includes a die package 102 and a sacrificial member 104.The die package 102 can be, for example, a CPU, high bandwidth memory(HBM), hybrid memory cube (HMC), fan out package (FOP), or some otherdie package. The die package 102 can have a top side 106, a bottom side108 (FIG. 2), and lateral sides 112 extending between the top side 106and bottom side 108. In the illustrated example, the die packages arerectangular prisms with four lateral sides 112. Other configurations maybe employed in the present disclosure. For example, the die package 102may have a cylindrical, pyramidal, conical, polygonal prism (havingthree or more lateral sides), and/or other shape.

In some embodiments, the die package assembly 100 includes a bodyportion 116 and a thermal interface material (TIM) 120 at the top side106 of the die package 102. The body portion 116 can house the activecomponents of the die package 102. For example, the body portion caninclude one or more dies, through-silicon vias, active circuitry,mechanical pillars, active pillars, etc. The TIM 120 can be, forexample, thermal grease, thermal adhesive, curing thermal grease,non-adhesive thermal glue, a thermally conductive pad, thermal tape,and/or phase-change materials. The TIM 120 can be configured to conductheat from the body portion 116. The TIM 120 can have a footprint (e.g.,the frame of reference of FIG. 3) that is identical to or substantiallyidentical to the footprint of the body portion 116. In some embodiments,the footprint of the TIM is greater than, less than, and/or of adifferent shape/orientation from the body portion 116.

As illustrated in FIG. 1-3, the sacrificial member 104 can surround someof all of the lateral sides 116 of the die package 102. For example, thesacrificial member 104 can be adjacent two, three, four, or more of thelateral sides 116 of the die package 102. The sacrificial member 104 canhave a first end 124 and a second end 126. In some embodiments, the twoends 124, 126 of the sacrificial member 104 are adjacent to each other(e.g., on a same lateral side of the die package 102). In someembodiments, the two ends 124, 126 are on different and/or oppositesides of the die package 102 from each other.

The sacrificial member 104 can extend between the first and second ends124, 126. For example, the sacrificial member 104 can have a generallyhelical or coil shape. The sacrificial member 104 can have one or morecoils 130 extending around the lateral sides of the die package 102. Thesacrificial member 104 can be constructed from one or more of anetchable (e.g., chemically etchable) material, a dissolvable material, abrittle material, a water-soluble material, and/or some othersacrificial material capable of being eliminated when encased in anothermaterial. In some embodiments, the sacrificial member 104 has across-sectional width (e.g., a diameter when round) that is between10-60 microns, between 25-200 microns, between 50-150 microns, between75-175 microns, between 80-120 microns, and/or between 120-250 microns.In some embodiments, the cross-sectional width of the sacrificial member104 is approximately 15 microns, approximately 100 microns,approximately 150 microns, and/or 200 microns. In some embodiments, thecross-sectional width of the sacrificial member 104 is constant from thefirst end 124 to the second end 126. In some embodiments, thecross-sectional width of the sacrificial member 104 varies from thefirst end 124 to the second end 126.

In some embodiments, the sacrificial member 104 is a pre-formedcomponent later positioned near and/or around the die package 102. Thesacrificial member 104 can be molded, bent (e.g., as a wire), orotherwise formed into a desired shape. In some embodiments, thesacrificial member 104 has a constant or substantially constant overallwidth in one or more dimension when observed normal to the top side 106of the die package (FIG. 3). In some embodiments, the overall width ofthe sacrificial member 104 varies from the top to the bottom (e.g., upand down in FIG. 2 and/or in a direction normal to the top side 106) ofthe sacrificial member 104.

FIG. 4 illustrates an embodiment of a die package system 140. The diepackage system 140 includes the die package assembly 100 of FIGS. 1-3and a substrate 144. The substrate 144 could be, for example, a wafer(e.g., a silicon or other wafer). In some embodiments, the substrate 144includes live circuitry. The substrate 144 can include a first surface146 and a second surface 148 opposite the first surface 146. The firstsurface 146 of the substrate can include one or more conductivefeatures. For example, the surface can include one or more metal traces,contact pads, or other active features. The die package assembly 100 canbe connected to the first surface 146 of the substrate 144. For example,the die package assembly 100 can be connected to the substrate 144 viaone or more electrically conductive elements 150 (e.g., copper pillars,solder bumps, and/or other conductive features).

The die package assembly 100 can have a height H1, as measured fromeither the bottom side of the die package 102 or from the first surface146 to the top side of the die package 102. The height H1 can be lessthan 400 microns, less than 500 microns, less than 700 microns, and/orless than 900 microns. In some embodiments, the height H1 of the diepackage assembly 100 can be between 100-700 microns, between 300-600microns, between 250-750 microns, and/or between 500-1500 microns. Insome embodiments, the height H1 of the die package assembly 100 isapproximately 750 microns.

As illustrated in FIG. 4, the die package system 140 can include asecond die package assembly 200. The second die package assembly 200 caninclude a die stack and/or other semiconductor structures. In someembodiments, the second die package assembly 200 includes a body portion216 and a TIM 200 on the top end of the body portion 216. The second diepackage 200 can be connected to a substrate (e.g., the same substrate144 to which the first die package 100 is connected, or anothersubstrate) in a manner the same as, or similar to the way in which thefirst die package 100 is connected to the substrate 144.

The second die package 202 can be spaced close to the first die package102. For example, the lateral distance D1 (e.g., the distance asmeasured parallel to the first surface 146 of the substrate 144) betweenthe first and second die packages 102, 103 can be between 2 mm-8 mm,between 1 mm-11 mm, between 3 mm-7 mm, between 6 mm-12 mm, between 9mm-11 mm, and/or between 7 mm-20 mm. In some embodiments, the lateraldistance D1 between the first and second die packages 102, 103 isbetween about 5 mm-10 mm.

As illustrated in FIG. 5, the die package system 140 can include anencapsulant 160 (e.g., overmold). The encapsulant 160 is formed after atleast one of the die packages 102, 104 are connected to the substrate144 (and/or to another substrate). The encapsulant 160 can include anupper surface 162 and lower surface 164. The lower surface 164 can be incontact with the first surface 146 of the substrate 144. The encapsulant160 forms a protective casing that at least partially surrounds the diepackages 102, 202. The encapsulant 160 can be sized and shaped tosurround all or a majority of the sacrificial member(s) 104. Preferably,at least one of the first and second ends 124, 126 remain outside of theencapsulant 160. The encapsulant 160 can include an epoxy resin or othersuitable material that can be molded or shaped to form the casing bytransfer molding or compression molding. The encapsulant 160 can includevarious additives (e.g., coupling agents, cure promoters, silicafillers, such as alumina fillers, etc.) selected to have suitablethermal conductivity, adhesion, chemical resistance, strength, and/orother properties.

In some embodiments, a heat sink 166 is connected to the top side 106 ofthe first die package 102 (e.g., to a top side of the TIM 120). In someembodiments, a second heat sink 266 is connected to the top side 206 ofthe second die package 202. The heat sink(s) 166, 266 can be connectedto the die package(s) 102, 202 before or after the encapsulant 160 overthe die packages 102, 202. The heat sink(s) 166, 266 can be configuredto conduct heat away (e.g., upward and/or in a direction away from thesubstrate 144) from the die package(s) 102, 202.

Given the tight spacing between die packages often employed in diepackage systems, cooling the systems becomes difficult. In the presentapplication, a cooling system is presented that permits improvedtemperature management in die package systems having compactconfigurations (the technology presented herein may also be used in lesscompact systems).

FIG. 6 illustrates the die package system 140 after a cooling channel170 is formed near the first die package assembly 100. The coolingchannel 170 is formed via removal of the sacrificial member 104 from theencapsulant 160. Removal of the sacrificial member 104 can be performedvia different methods. These methods may be informed by the materialcomposition of the sacrificial member 104 and/or of the encapsulant 160.For example, for dissolvable sacrificial members 104, water or othersolutions may be introduced to the sacrificial member 104 to dissolvethe sacrificial member 104. In such embodiments, all portions of thesacrificial member 104 may be dissolved, both inside and outside of theencapsulant 160. Sacrificial materials appropriate for dissolvinginclude, but are not limited to, salt, glucose, and/or some otherdissolvable material or combination of materials. In some embodiments,the sacrificial member 104 may be removed using chemical etching.Sacrificial member materials appropriate for chemical etching caninclude, for example, copper, aluminum, polymers (e.g., phenol orepoxy-based polymers), and/or some other material or combination ofmaterials appropriate for chemical etching. In some embodiments, thesacrificial member 104 is constructed from a material with a meltingpoint lower than temperature harmful to the encapsulant 160 and/or tothe components of the die package(s). In some embodiments, thesacrificial member 104 is constructed from a material (e.g., a brittlematerial) that can be removed via vibrations introduced to the diepackage system 140.

As illustrated, removal of the sacrificial member 104 leaves a cavity172 in the encapsulant 160 and/or other portion of the die packagesystem 140. The cavity 172 has a size and shape similar or identical tothe size and shape of the sacrificial member 104. The places at whichthe sacrificial member 104 exited to the encapsulant 160 become openingsto the cavity 172. For example, as illustrated in FIG. 6, a firstopening 174 and a second opening 176 are left behind by the removal ofthe sacrificial member 104. In the illustrated embodiment, the first andsecond openings 174, 176 are in the upper surface 162 of the encapsulant160. In some embodiments, one or more openings are located throughlateral surfaces of the encapsulant 160 in addition to or instead ofopenings in the upper surface 162.

The die package system 140 can include a fluid management system 178.The fluid management system 178 can be configured to move fluid throughthe cavity 172. Movement of fluid through the cavity 172 can facilitateefficient heat transfer from the die package(s) 102, 202 to an exteriorof the die package system 140. In some embodiments, the fluid managementsystem 178 includes a pump 180 or other fluid flow device connected toone or more of the openings 174, 176. For example, a fluid line 182 amay connect the pump 180 to the first opening 174. The pump 180 can beconfigured to move fluid into and/or out from the encapsulant 160through the openings 174, 176. In some embodiments, the pump 180includes bellows, rotors, and/or other pump components.

In some embodiments, the fluid management system 178 includes a heatexchanger 186. The heat exchanger 186 can be in fluid communication withone, some, or all of the openings 174, 176 and pump 180. The heatexchanger 186 can be, for example, a shell and tube heat exchanger, aplate heat exchanger, and/or some other heat exchanger. The heatexchanger 186 can be configured to remove heat from the fluid pumped outof the die package system 140 (e.g., out of the encapsulant). The pump180 can be configured to pump fluid from the cavity 172, to the heatexchanger 186, and back to the cavity 172. Fluid may be passed betweenthe cavity 172, pump 180, and heat exchanger 186 via various fluid lines182 a, 182 b, 182 c (collectively, “fluid lines 182”). In theillustrated embodiment, the direction of fluid flow is indicated ascoming from the cavity 172, to the heat exchanger 186, to the pump 180,and back to the cavity 172. This direction of flow may be reversed. Insome embodiments, additional pumps and/or heat exchangers may beutilized.

Preferably, the fluid management system 178 is a closed system. Forexample, the cavity 172, pump(s) 180, heat exchanger(s) 186, fluidline(s) 180 can be a closed loop without outside fluid access.Maintaining the fluid management system 178 as a closed system canreduce the risk of contamination of the cavity 172 or other componentswith pollutants (e.g., particulates and/or undesirably fluids). In someembodiments, the fluid lines 180 and/or cavity 172 have smallcross-sectional areas. In such embodiments, maintaining a closed systemcan reduce the risk that the fluid lines 180 and/or cavity 172 becomeclogged.

Preferably, the fluid used in the fluid management system 178 canefficiently transferring heat from the die package system 140. The fluidcan be, for example, a refrigerant, water, gas, a hydrocarbon fluid,glycol, a glycol-water mixture, silicon oil, and/or some other liquid,gas, or combination of liquid(s) and gas(es). In some embodiments, thefluid has a low viscosity and/or is non-corrosive.

FIG. 7 is a flow chart of an embodiment of a method 500 formanufacturing a semiconductor device. The method 500 can include atleast partially surrounding a die package with a sacrificial member(block 504). In some embodiments, surrounding at least two sides of thedie package comprises surrounding all lateral sides of the die packagewith the sacrificial member. The die package can have any or all of thefeatures of the above-described die packages 102, 202. The sacrificialmember can have any or all of the features of the above-describedsacrificial member 104 or the below-described sacrificial members 204,304. The method 500 can include connecting the die package to asubstrate. In some embodiments, the method 500 includes connecting morethan one die package to the substrate or to a plurality of substrates.In some such embodiments, the method 500 includes at least partiallysurrounding more than one die package with the sacrificial member orwith more than one sacrificial member.

The method 500 can include encapsulating the die package(s) andsacrificial member(s) with an encapsulant material (block 508). Theencapsulant material can have properties the same as or similar to thoseof the above-described encapsulant 160.

The method 500 can include removing the sacrificial member (block 512).Removing the sacrificial member can include removing all portions of thesacrificial member inside of and/or outside of the encapsulant. In someembodiments, removing the sacrificial member includes forming one ormore cavities within the encapsulant. The one or more cavities can haveproperties the same as or similar to those of the above-described cavity172. In some embodiments, removing the sacrificial member includeschemically etching, melting, dissolving, vaporizing, and/or shatteringthe sacrificial member.

In some embodiments, the method 500 includes connecting a fluidmanagement system to the openings of the cavity. The fluid managementsystem can have all or some of the features of the above-described fluidmanagement system 178. For example, the method 500 can includeconnecting a pump to one or more openings of the cavity. The method 500can include pumping fluid through cavity. In some embodiments, themethod 500 includes pumping the fluid through a heat exchanger. The heatexchanger can have all or some of the features of the above-describedheat exchanger 186. The method 500 can include connecting the heatexchanger to the fluid management system such that the heat exchanger isin fluid communication with one or more of the openings.

FIGS. 8-10 illustrate an embodiment of a sacrificial member 204 at leastpartially surrounding a die package 102. The die package 102 can havesome or all of the same features described above. As illustrated, thesacrificial member 204 can have a general coil shape formed fromstraight portions 205 connected to each other via corner portions 207.As illustrated in FIG. 10, the sacrificial member 204 can have agenerally polygonal (e.g., square or rectangle) shape when viewed normalto the top side 106 of the die package 102.

FIGS. 11-13 illustrate an embodiment of a sacrificial member 304 atleast partially surrounding a die package 102. The die package 102 canhave some or all of the same features described above. As illustrated,the sacrificial member 304 can generally follow a wave or undulatingpattern around all or a portion of the lateral sides 112 of the diepackage 102. In the illustrated example, the sacrificial member 304includes vertical (e.g., in a direction normal to the top side 106 ofthe die package 102) segments 305 connected to each other via upper andlower turn portions 307. In some embodiments, the sacrificial member 304includes horizontal (e.g., parallel to the bottom side 108 of the diepackage 102) segments connected to each other via lateral turn portions.In the illustrated example, the two ends 324, 326 of the sacrificialmember 304 are adjacent each other. In some embodiments, the two ends324, 326 are on different (e.g., opposite) sides of the die package 102from each other. As illustrated in FIG. 13, the sacrificial member 304can have a generally polygonal (e.g., square or rectangle) shape whenviewed normal to the top side 106 of the die package 102. In someembodiments, the sacrificial member 304 has a generally rounded (e.g.,circle or oval) shape when viewed normal to the top side 106 of the diepackage 102.

In some embodiments, two or more of the sacrificial member 104, 204, 304can be used in the same die package system 640. For example, asillustrated in FIG. 14, the die package system 640 can include one ofeach of the sacrificial members 104, 204, 304 surrounding respective diepackages 102. In some embodiments, one or more die packages 102 of thesystem 640 are not surrounded by a sacrificial member. The system 640can include one or more substrates 644 to which the die package(s) areconnected. In some embodiments, each of the sacrificial members 104,204, 304 include first and second ends. In the illustrated embodiment,the sacrificial members 104, 204, 304 are connected to each other toform one continuous sacrificial member having a first end 624 and asecond end 626. In some embodiments, two or more, but fewer than all ofthe sacrificial members are connected to each other.

FIG. 15 illustrates an embodiment of the die package system 640 afterthe encapsulant 660 is formed and the sacrificial members are removed.The resulting system 640 can include one or more openings 674, 676 to acavity 672 formed by the removal of the sacrificial member(s). In someembodiments, a fluid management system similar to or the same as thefluid management system 178 described above can be connected to theopenings 674, 676 to facilitate temperature management of the diepackage system 640.

Any one of the semiconductor devices having the features described above(e.g., with reference to FIGS. 1-15) can be incorporated into any of amyriad of larger and/or more complex systems, a representative exampleof which is system 1000 shown schematically in FIG. 16. The system 1000can include a processor 1002, a memory 1004 (e.g., SRAM, DRAM, flash,and/or other memory devices), input/output devices 1005, and/or othersubsystems or components 1008. The semiconductor dies and semiconductordie assemblies described above can be included in any of the elementsshown in FIG. 16. The resulting system 1000 can be configured to performany of a wide variety of suitable computing, processing, storage,sensing, imaging, and/or other functions. Accordingly, representativeexamples of the system 1000 include, without limitation, computersand/or other data processors, such as desktop computers, laptopcomputers, Internet appliances, hand-held devices (e.g., palm-topcomputers, wearable computers, cellular or mobile phones, personaldigital assistants, music players, etc.), tablets, multi-processorsystems, processor-based or programmable consumer electronics, networkcomputers, and minicomputers. Additional representative examples of thesystem 1000 include lights, cameras, vehicles, etc. With regard to theseand other examples, the system 1000 can be housed in a single unit ordistributed over multiple interconnected units, e.g., through acommunication network. The components of the system 1000 can accordinglyinclude local and/or remote memory storage devices and any of a widevariety of suitable computer-readable media.

The above detailed descriptions of embodiments of the technology are notintended to be exhaustive or to limit the technology to the precise formdisclosed above. Although specific embodiments of, and examples for, thetechnology are described above for illustrative purposes, variousequivalent modifications are possible within the scope of thetechnology, as those skilled in the relevant art will recognize. Forexample, while steps are presented in a given order, alternativeembodiments may perform steps in a different order. Moreover, thevarious embodiments described herein may also be combined to providefurther embodiments. Reference herein to “one embodiment,” “anembodiment,” or similar formulations means that a particular feature,structure, operation, or characteristic described in connection with theembodiment can be included in at least one embodiment of the presenttechnology. Thus, the appearances of such phrases or formulations hereinare not necessarily all referring to the same embodiment.

Certain aspects of the present technology may take the form ofcomputer-executable instructions, including routines executed by acontroller or other data processor. In some embodiments, a controller orother data processor is specifically programmed, configured, and/orconstructed to perform one or more of these computer-executableinstructions. Furthermore, some aspects of the present technology maytake the form of data (e.g., non-transitory data) stored or distributedon computer-readable media, including magnetic or optically readableand/or removable computer discs as well as media distributedelectronically over networks. Accordingly, data structures andtransmissions of data particular to aspects of the present technologyare encompassed within the scope of the present technology. The presenttechnology also encompasses methods of both programmingcomputer-readable media to perform particular steps and executing thesteps.

Moreover, unless the word “or” is expressly limited to mean only asingle item exclusive from the other items in reference to a list of twoor more items, then the use of “or” in such a list is to be interpretedas including (a) any single item in the list, (b) all of the items inthe list, or (c) any combination of the items in the list. Where thecontext permits, singular or plural terms may also include the plural orsingular term, respectively. Additionally, the term “comprising” is usedthroughout to mean including at least the recited feature(s) such thatany greater number of the same feature and/or additional types of otherfeatures are not precluded. Directional terms, such as “upper,” “lower,”“front,” “back,” “vertical,” and “horizontal,” may be used herein toexpress and clarify the relationship between various elements. It shouldbe understood that such terms do not denote absolute orientation.Further, while advantages associated with certain embodiments of thetechnology have been described in the context of those embodiments,other embodiments may also exhibit such advantages, and not allembodiments need necessarily exhibit such advantages to fall within thescope of the technology. Accordingly, the disclosure and associatedtechnology can encompass other embodiments not expressly shown ordescribed herein.

We claim:
 1. A method of manufacturing a semiconductor device, themethod comprising: surrounding at least two sides of a die package witha sacrificial member; encapsulating the die package and sacrificialmember in an encapsulant material; and removing the sacrificial memberafter encapsulating the die package and sacrificial member in theencapsulant material; wherein at least a portion of the encapsulantmaterial is in contact with at least a portion of the die package afterremoving the sacrificial member.
 2. The method of claim 1, wherein thesacrificial member surrounds the die package on at least three sides. 3.The method of claim 1, wherein surrounding at least two sides of the diepackage comprises surrounding all lateral sides of the die package withthe sacrificial member.
 4. The method of claim 3, wherein thesacrificial member is a coil.
 5. The method of claim 1, furthercomprising pumping fluid through a cavity in the encapsulant formed bythe removal of the sacrificial member.
 6. The method of claim 1, whereinremoving the sacrificial member results in a first opening to anexterior of the encapsulant material and a second opening to theexterior of the encapsulant material, wherein the first opening is influid communication with the second opening through the encapsulantmaterial.
 7. The method of claim 6, further comprising: connecting afluid pump to the first opening such that the fluid pump is in fluidcommunication with the first opening; and pumping fluid into theencapsulant material through the one of first opening or the secondopening and out from the encapsulant material through the other of thefirst opening or the second opening.
 8. The method of claim 6, furthercomprising: connecting a heat exchanger to the first opening or to thesecond opening; and pumping the fluid from the heat exchanger to thefirst opening or to the second opening.
 9. The method of claim 1,further comprising: providing a substrate comprising a first surface anda second surface opposite the first surface; and connecting the diepackage to the first surface of the substrate.
 10. The method of claim9, further comprising connecting a second die package to the firstsurface of the substrate.
 11. A method of manufacturing a semiconductordevice, the method comprising: surrounding at least two sides of a diepackage with a sacrificial member, wherein at least a portion of thesacrificial member is spaced from the die package; encapsulating the diepackage and sacrificial member in an encapsulant material; and removingthe sacrificial member via a non-mechanical removal process.
 12. Themethod of claim 11, wherein the sacrificial member is an elongatestructure with no branches or forks.
 13. The method of claim 12, whereinremoving the sacrificial member forms a cooling passage through theencapsulant material, and wherein the cooling passage has only one inletand only one outlet into and out from the encapsulant material.
 14. Themethod of claim 11, wherein surrounding at least two sides of a diepackage with a sacrificial member includes surrounding all lateral sidesof the die package.
 15. A semiconductor device assembly comprising: adie package comprising: a bottom side; a top side; and lateral sidesextending between the top and bottom sides; an encapsulant materialencapsulating, molded over, and in contact with at least a portion ofthe die package; and a cooling cavity in the encapsulant material, thecooling cavity comprising: only one inlet into the encapsulant material;only one outlet from the encapsulant material; and an elongate channelextending without branches or forks from the inlet to the outlet;wherein the elongate channel surrounds at least two lateral sides of thefirst die package.
 16. The semiconductor device assembly of claim 15,wherein the elongate channel surrounds all lateral sides of the firstdie package.
 17. The semiconductor device assembly of claim 16, whereinthe elongate channel has a helical shape.
 18. The semiconductor deviceassembly of claim 15, wherein both the inlet and the outlet of thecooling cavity are through a top surface of the encapsulant material.19. The semiconductor device assembly of claim 15, wherein the coolingcavity extends along a majority of a height of the die package, asmeasured from the bottom side to the top side.